Strained-quantum-well, modulation-doped, field-effect transistorZIPPERIAN, T. E; DRUMMOND, T. J.Electronics Letters. 1985, Vol 21, Num 18, pp 823-824, issn 0013-5194Article

Impact ionization coefficients in In_0.2Ga_0.8 As/GaAs strained-layer superlatticesBULMAN, G. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Applied physics letters. 1986, Vol 49, Num 4, pp 212-214, issn 0003-6951Article

The determination of impact ionization coefficients in In_0.2Ga_0.8As/GaAs strained-layer superlattice Mesa photodiodesBULMAN, G. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Journal of electronic materials. 1986, Vol 15, Num 4, pp 221-227, issn 0361-5235Article

Neutron-induced trapping levels in aluminum gallium arsenideBARNES, C. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Journal of electronic materials. 1985, Vol 14, Num 2, pp 95-118, issn 0361-5235Article

MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ≥ 10μmKURTZ, S. R; BIELEFELD, R. M; ZIPPERIAN, T. E et al.Semiconductor science and technology. 1990, Vol 5, Num 3S, pp S24-S26, issn 0268-1242Conference Paper

High-detectivity (> 1 × 10¹⁰ cm √Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detectorKURTZ, S. R; DAWSON, L. R; ZIPPERIAN, T. E et al.IEEE electron device letters. 1990, Vol 11, Num 1, pp 54-56, issn 0741-3106Article

Superposition of light-hole and heavy-hole bandgaps in InGaAs/InAlAs strained quantum-well structuresFRITZ, I. J; KLEM, J. F; BRENNAN, T. M et al.Superlattices and microstructures. 1991, Vol 10, Num 1, pp 99-106, issn 0749-6036, 8 p.Article

High-voltage, wavelength-discriminating, light-activated GaAs thyristorCARSON, R. F; HUGHES, R. C; ZIPPERIAN, T. E et al.Electronics Letters. 1989, Vol 25, Num 23, pp 1592-1593, issn 0013-5194Article

Pressure dependence of the E2 and E1 deep levels in GaAs, GaP, and their alloysSAMARA, G. A; BIEFELD, R. M; DAWSON, L. R et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 8, pp 6772-6775, issn 0163-1829, 4 p.Article

S-parameter measurements and microwave applications of superconducting flux flow transistorsMARTENS, J. S; HIETALA, V. M; ZIPPERIAN, T. E et al.IEEE transactions on microwave theory and techniques. 1991, Vol 39, Num 12, pp 2018-2025, issn 0018-9480Conference Paper

GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain currentZIPPERIAN, T. E; DAWSON, L. R; DRUMMOND, T. J et al.Applied physics letters. 1988, Vol 52, Num 12, pp 975-977, issn 0003-6951Article

Isothermal measurements and thermal desorption of organic vapors using SAW devicesMARTIN, S. J; RICCO, A. J; GINLEY, D. S et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 1987, Vol 34, Num 2, pp 142-147, issn 0885-3010Article

p-channel strained quantum well, field-effect transistorDRUMMOND, T. J; ZIPPERIAN, T. E; FRITZ, I. J et al.Applied physics letters. 1986, Vol 49, Num 8, pp 461-463, issn 0003-6951Article

Proton isolated In_0.2Ga_0.8As/GaAs strained-layer superlattice avalanche photodiodeBULMAN, G. E; MYERS, D. R; ZIPPERIAN, T. E et al.Applied physics letters. 1986, Vol 48, Num 15, pp 1015-1017, issn 0003-6951Article

Comparison of trapping levels in GaAsP strained-layer superlattice structures and in their buffer layersBARNES, C. E; BIEFELD, R. M; ZIPPERIAN, T. E et al.Applied physics letters. 1984, Vol 45, Num 4, pp 408-410, issn 0003-6951Article

Optical switching in N×N arrays of individually addressable electroabsorption modulators based on Wannier-Stark carrier localization in GaAs/GaAlAs superlatticesOLBRIGHT, G. R; ZIPPERIAN, T. E; KLEM, J et al.Journal of the Optical Society of America. B, Optical physics (Print). 1991, Vol 8, Num 2, pp 346-354, issn 0740-3224Article

Demonstration of an InAsSb strained-layer superlattice photodiodeKURTZ, S. R; DAWSON, L. R; ZIPPERIAN, T. E et al.Applied physics letters. 1988, Vol 52, Num 19, pp 1581-1583, issn 0003-6951Article

Diffusion dynamics of holes in In_xGa_1-xAs/GaAs strained-layer superlatticesGOURLEY, P. L; WICZER, J. J; ZIPPERIAN, T. E et al.Applied physics letters. 1986, Vol 49, Num 2, pp 100-102, issn 0003-6951Article

Superconducting flux flow digital circuitsMARTENS, J. S; ZIPPERIAN, T. E; HIETALA, V. M et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 3, pp 656-660, issn 0018-9383Article

Evaluation of superconducting Tl-Ca-Ba-Cu-O thin-film surface-resistance using a microstrip ring resonatorHIETALA, V. M; MARTENS, J. S; GINLEY, D. S et al.IEEE microwave and guided wave letters. 1991, Vol 1, Num 4, pp 84-86, issn 1051-8207, 3 p.Article

Long-wavelength InAsSb strained-layer superlattice photovoltaic infrared detectorsKURTZ, S. R; DAWSON, L. R; BIEFELD, R. M et al.IEEE electron device letters. 1989, Vol 10, Num 4, pp 150-152, issn 0741-3106Article

Investigation of charge storage in InAs/AlAsSb quantum well capacitorsLOTT, J. A; DAWSON, L. R; WEAVER, H. T et al.Applied physics letters. 1989, Vol 55, Num 11, pp 1118-1120, issn 0003-6951, 3 p.Article

Stability of strained quantum-well field-effect transistor structuresPEERCY, P. S; DODSON, B. W; TSAO, J. Y et al.IEEE electron device letters. 1988, Vol 9, Num 12, pp 621-623, issn 0741-3106Article

High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectorsKURTZ, S. R; BIEFELD, R. M; DAWSON, L. R et al.Applied physics letters. 1988, Vol 53, Num 20, pp 1961-1963, issn 0003-6951Article

Zinc-implantation-disordered (InGa)As/GaAs strained-layer superlattice diodesMYERS, D. R; ARNOLD, G. W; ZIPPERIAN, T. E et al.Journal of applied physics. 1986, Vol 60, Num 3, pp 1131-1134, issn 0021-8979Article